10 Patents
- US125503872026Trench Junction Field Effect Transistor Having a Mesa Region
Infineon Technologies Austria AG
0 cites - 0 cites
- US124245012025Semiconductor Package Including a Chip-substrate Composite Semiconductor Device
Infineon Technologies Austria AG
0 cites - 0 cites
- US123494012025Semiconductor Device Including a Trench Structure Having a Trench Dielectric Structure with a Gap
Infineon Technologies Austria AG
0 cites - US121664832024Electronic Circuit with a Transistor Device and a Biasing Circuit
Infineon Technologies Austria AG
0 cites - 0 cites
- US119786932024Semiconductor Device Package Comprising Side Walls Connected with Contact Pads of a Semiconductor Die
Infineon Technologies AG
0 cites - US117287902023Electronic Circuit Having a Transistor Device and a Biasing Circuit
Infineon Technologies Austria AG
0 cites - 0 cites