5 Patents
- US124083962025Field-effect Transistors with Heterogenous Doped Regions in the Substrate of a Silicon-on-insulator Substrate
Globalfoundries U.S. Inc.
0 cites - 0 cites
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- US118376532023Lateral Bipolar Junction Transistor Including a Stress Layer and Method
Globalfoundries U.S. Inc.
0 cites - 0 cites