61 Patents
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- US126105272026Integrated Circuit Structures Having Memory Access Transistor with Backside Contact
Intel Corporation
0 cites - US125987772026Low Temperature, High Germanium, High Boron Sige:b Pepi with Titanium Silicide Contacts for Ultra-low PMOS Contact Resistivity and Thermal Stability
Intel Corporation
0 cites - 0 cites
- US125884852026Integrated Circuit Structures Having Airgaps for Backside Signal Routing or Power Delivery
Intel Corporation
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- US125754012026Integrated Circuit Devices with Angled Transistors and Angled Routing Tracks
Intel Corporation
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- US125751702026Low Temperature, High Germanium, High Boron Sige:b Pepi with a Silicon Rich Capping Layer for Ultra-low PMOS Contact Resistivity and Thermal Stability
Intel Corporation
0 cites - US125637242026Two Transistor Memory Cells with Source-drain Coupling in One Transistor
Intel Corporation
0 cites - US125504012026Doped STI to Reduce Source/drain Diffusion for Germanium NMOS Transistors
Intel Corporation
0 cites - US125061272025Package Architecture of Photonic System with Vertically Stacked Dies Having Planarized Edges
Intel Corporation
0 cites - US124713622025Integrated Circuit Structures Having Ultra-high Conductivity Global Routing
Intel Corporation
0 cites - US124713342025Integrated Circuit Devices with Angled Transistors Formed Based on Angled Wafers
Intel Corporation
0 cites - US124396402025Reduced Contact Resistivity with PMOS Germanium and Silicon Doped with Boron Gate All Around Transistors
Intel Corporation
0 cites - US124329642025Co-integrated Gallium Nitride (gan) and Complementary Metal Oxide Semiconductor (CMOS) Integrated Circuit Technology
Intel Corporation
0 cites - US124263422025Low Germanium, High Boron Silicon Rich Capping Layer for PMOS Contact Resistance Thermal Stability
Intel Corporation
0 cites - US124190912025Source Electrode and Drain Electrode Protection for Nanowire Transistors
Intel Corporation
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- US123639672025Integration Methods to Fabricate Internal Spacers for Nanowire Devices
Sony Group Corporation
0 cites - US123494202025Device, Method and System to Provide a Stressed Channel of a Transistor
Intel Corporation
0 cites - US123425742025Contact Resistance Reduction in Transistor Devices with Metallization on Both Sides
Intel Corporation
0 cites - US123289202025Nanoribbon Sub-fin Isolation by Backside Si Substrate Removal Etch Selective to Source and Drain Epitaxy
Intel Corporation
0 cites - US123289272025Low Resistance and Reduced Reactivity Approaches for Fabricating Contacts and the Resulting Structures
Intel Coporation
0 cites - US122940272025Semiconductor Device Having Doped Epitaxial Region and Its Methods of Fabrication
Intel Corporation
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- US122888082025High Aspect Ratio Source or Drain Structures with Abrupt Dopant Profile
Intel Corporation
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- US121661242024Gate-all-around Integrated Circuit Structures Having Germanium-doped Nanoribbon Channel Structures
Intel Corporation
0 cites - US121487512024Use of a Placeholder for Backside Contact Formation for Transistor Arrangements
Intel Corporation
0 cites - US121193872024Low Resistance Approaches for Fabricating Contacts and the Resulting Structures
Intel Corporation
0 cites - US121070852024Interconnect Techniques for Electrically Connecting Source/drain Regions of Stacked Transistors
Intel Corporation
0 cites - US120466002024Techniques for Achieving Multiple Transistor Fin Dimensions on a Single Die
Intel Corporation
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- US120274172024Source or Drain Structures with High Germanium Concentration Capping Layer
Intel Corporation
0 cites - 0 cites
- US120210812024Techniques for Achieving Multiple Transistor Fin Dimensions on a Single Die
Intel Corporation
0 cites - US119964472024Field Effect Transistors with Gate Electrode Self-aligned to Semiconductor Fin
Intel Corporation
0 cites - 0 cites
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- US119089342024Semiconductor Device Having Doped Epitaxial Region and Its Methods of Fabrication
Intel Corporation
0 cites - US118699392024Integration Methods to Fabricate Internal Spacers for Nanowire Devices
Sony Group Corporation
0 cites - US118045232023High Aspect Ratio Source or Drain Structures with Abrupt Dopant Profile
Intel Corporation
0 cites - 0 cites
- US117642752023Indium-containing Fin of a Transistor Device with an Indium-rich Core
Intel Corporation
0 cites - 0 cites
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- US117423462023Interconnect Techniques for Electrically Connecting Source/drain Regions of Stacked Transistors
Intel Corporation
0 cites - US117356702023Non-selective Epitaxial Source/drain Deposition to Reduce Dopant Diffusion for Germanium NMOS Transistors
Intel Corporation
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- US116706822023FINFET Transistor Having a Doped Sub Fin Structure to Reduce Channel to Substrate Leakage
Tahoe Research, Ltd.
0 cites - US116317372023Ingaas Epi Structure and Wet Etch Process for Enabling Iii-v GAA in Art Trench
Intel Corporation
0 cites - 0 cites
- US115814062023Method of Fabricating CMOS Finfets by Selectively Etching a Strained Sige Layer
Daedalus Prime LLC
0 cites - 0 cites
- US115576582023Transistors with High Density Channel Semiconductor Over Dielectric Material
Intel Corporation
0 cites - US115576762023Device, Method and System to Provide a Stressed Channel of a Transistor
Intel Corporation
0 cites