Patents/Inventors

Anand Murthy

Portland, ORUS43 patents

41 Patents

US126157522026
Stacked SRAM with Shared Wordline Connection
Intel Corporation
0 cites
US126158132026
Gate-all-around Integrated Circuit Structures Having Vertically Discrete Source or Drain Structures
Intel Corporation
0 cites
US126157622026
Three-dimensional Dynamic Random Access Memory with Stacked Semiconductor Structures
Intel Corporation
0 cites
US126105542026
Multi-storage Element Single-transistor Crosspoint Memory Systems at Low Temperatures
Intel Corporation
0 cites
US125640302026
Replacement Conductive Material for Interconnect Features
Intel Corporation
0 cites
US125573402026
Cladding and Condensation for Strained Semiconductor Nanoribbons
Intel Corporation
0 cites
US125507322026
Single Conductivity Type Devices for Low Temperature Computation
Intel Corporation
0 cites
US125507332026
Multiple Epitaxial Layer Source and Drain Transistors for Low Temperature Computation
Intel Corporation
0 cites
US125503812026
Device, Method and System to Provide Epitaxial Structures Opposite Sides of a Separation Layer Between Channel Stacks
Intel Corporation
0 cites
US125433512026
Enriched Semiconductor Nanoribbons for Producing Intrinsic Compressive Strain
INTEL CORPORATION
0 cites
US124842662025
Gate-all-around Integrated Circuit Structures Having Underlying Dopant-diffusion Blocking Layers
Intel Corporation
0 cites
US124842722025
Source or Drain Structures with Relatively High Germanium Content
Intel Corporation
0 cites
US124514202025
Staircase-based Metal-insulator-metal (MIM) Capacitors
Intel Corporation
0 cites
US124396692025
Co-deposition of Titanium and Silicon for Improved Silicon Germanium Source and Drain Contacts
Intel Corporation
0 cites
US124143662025
Co-integration of High Voltage (HV) and Low Voltage (LV) Transistor Structures, Using Channel Height and Spacing Modulation
Intel Corporation
0 cites
US123880112025
Top Gate Recessed Channel CMOS Thin Film Transistor and Methods of Fabrication
Intel Corporation
0 cites
US123426112025
Source or Drain Structures with Vertical Trenches
Intel Corporation
0 cites
US122727272025
Gate-all-around Integrated Circuit Structures Having Embedded Gesnb Source or Drain Structures
Intel Corporation
0 cites
US122665702025
Self-aligned Interconnect Structures and Methods of Fabrication
Intel Corporation
0 cites
US122552342025
Integrated Circuit Structures Having Germanium-based Channels
Intel Corporation
0 cites
US122060272025
Gate-all-around Integrated Circuit Structures Having Nanowires with Tight Vertical Spacing
Intel Corporation
0 cites
US121599012024
Gate-all-around Integrated Circuit Structures Having Source or Drain Structures with Epitaxial Nubs
Intel Corporation
0 cites
US120948812024
Arsenic-doped Epitaxial Source/drain Regions for NMOS
Intel Corporation
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US120275852024
Source or Drain Structures with Low Resistivity
Intel Corporation
0 cites
US119964042024
Three-dimensional Integrated Circuits (3dics) Including Bottom Gate MOS Transistors with Monocrystalline Channel Material
Intel Corporation
0 cites
US119905132024
Gate-all-around Integrated Circuit Structures Having Embedded Gesnb Source or Drain Structures
Intel Corporation
0 cites
US119844492024
Channel Structures with Sub-fin Dopant Diffusion Blocking Layers
Intel Corporation
0 cites
US119787842024
Gate-all-around Integrated Circuit Structures Having Germanium Nanowire Channel Structures
Intel Corporation
0 cites
US119731432024
Source or Drain Structures for Germanium N-channel Devices
Intel Corporation
0 cites
US119358872024
Source or Drain Structures with Vertical Trenches
Intel Corporation
0 cites
US119293202024
Top Gate Recessed Channel CMOS Thin Film Transistor in the Back End of Line and Methods of Fabrication
Intel Corporation
0 cites
US119234212024
Integrated Circuit Structures Having Germanium-based Channels
Intel Corporation
0 cites
US118879882024
Thin Film Transistor Structures with Regrown Source and Drain
Intel Corporation
0 cites
US117698362023
Gate-all-around Integrated Circuit Structures Having Nanowires with Tight Vertical Spacing
Intel Corporation
0 cites
US117569982023
Source-channel Junction for III-V Metal-oxide-semiconductor Field Effect Transistors (mosfets)
Intel Corporation
0 cites
US117356302023
Integrated Circuit Structures with Source or Drain Dopant Diffusion Blocking Layers
Intel Corporation
0 cites
US116950812023
Channel Layer Formation for III-V Metal-oxide-semiconductor Field Effect Transistors (mosfets)
Intel Corporation
0 cites
US116213252023
Source or Drain Structures with Low Resistivity
Intel Corporation
0 cites
US116109952023
Methods of Forming Dislocation Enhanced Strain in NMOS and PMOS Structures
Daedalus Prime LLC
0 cites
US116108892023
Arsenic-doped Epitaxial, Source/drain Regions for NMOS
Intel Corporation
0 cites
US115521692023
Source or Drain Structures with Phosphorous and Arsenic Co-dopants
Intel Corporation
0 cites