10 Patents
- US124713102025Method of Making a Finfet Device Including a Step of Removing a Portion of a Fin
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122741812025Magnetic Tunnel Junction Device and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122680972025Top-interconnection Metal Lines for a Memory Array Device and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US119859062024Low-resistance Contact to Top Electrodes for Memory Cells and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - 0 cites
- US119089392024Method of Making a Finfet Device Including a Step of Recessing a Subset of the Fins
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118568692023Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US117232842023Top-interconnection Metal Lines for a Memory Array Device and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US116659772023Magnetic Tunnel Junction Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115456192023Memory Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites