34 Patents
- US125882622026Sacrificial Gate Capping Layer for Gate Protection During Source/drain Contact Opening
Tokyo Electron Limited
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- US124513292025Plasma Processing Apparatus with Tunable Electrical Characteristic
TOKYO ELECTRON LIMITED
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- US122886922025Method of Forming a FET Structure by Selective Deposition of Film on Source/drain Contact
TOKYO ELECTRON LIMITED
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- US122179352025Plasma Processing Methods Using Multiphase Multifrequency Bias Pulses
Tokyo Electron Limited
0 cites - US121892972025Methods for Extreme Ultraviolet (EUV) Resist Patterning Development
Tokyo Electron Limited
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- US120572932024Methods for Real-time Pulse Measurement and Pulse Timing Adjustment to Control Plasma Process Performance
Tokyo Electron Limited
0 cites - US120149012024Tailored Electron Energy Distribution Function by New Plasma Source: Hybrid Electron Beam and RF Plasma
Tokyo Electron Limited
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- US119423072024Plasma Processing with Radio Frequency (RF) Source and Bias Signal Waveforms
Tokyo Electron Limited
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- US117347832023System and Method for Detecting On-street Parking Violations
TATA CONSULTANCY SERVICES LIMITED
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