3 Patents
- US121703152024Field Effect Transistor with Vertical Nanowire in Channel Region and Bottom Spacer Between the Vertical Nanowire and Gate Dielectric Material
GLOBALFOUNDRIES U.S. Inc.
0 cites - US119676372024Fin-based Lateral Bipolar Junction Transistor with Reduced Base Resistance and Method
Globalfoundries U.S. Inc.
0 cites - US116056722023Steep-switch Field Effect Transistor with Integrated Bi-stable Resistive System
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites