Patents/Inventors

Alexander Reznicek

Troy, NYUS127 patents

142 Patents

US126220532026
Hybrid CMOS with Fin and Nanosheet Architectures
International Business Machines Corporation
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US126220342026
Semiconductor Transistor Structure Having an Epitaxial Oxide Spacer Layer
International Business Machines Corporation
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US126158122026
Stacked Field-effect Transistors
International Business Machines Corporation
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US126106132026
Nanosheet Device with Vertical Blocker Fin
International Business Machines Corporation
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US125882172026
Programming Current Control for Artificial Intelligence (AI) Devices
International Business Machines Corporation
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US125882162026
Pillar Based Memory (MRAM) Embedded Within the Buried Power Rail Within a Backside Power Distribution Network
International Business Machines Corporation
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US125753302026
Ordered Alloy Magnetic Tunnel Junction with Simplified Seed Structure
International Business Machines Corporation
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US125753322026
Cofeb Based Magnetic Tunnel Junction Device with Boron Encapsulation Layer
International Business Machines Corporation
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US125686502026
Profile Engineering for Deep Trenches in a Semiconductor Device
International Business Machines Corporation
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US125568042026
Policy for Preventing Unauthorized Photo Capture
International Business Machines Corporation
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US125573202026
FVBP Without Backside Si Recess
International Business Machines Corporation
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US125503712026
Separate Gate Complementary Field-effect Transistor
International Business Machines Corporation
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US125506202026
Top Electrode to Metal Line Connection for Magneto-resistive Random-access Memory Stack Height Reduction
International Business Machines Corporation
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US125506252026
MRAM with Doped Silicon-germanium-tin Alloy Electrodes
International Business Machines Corporation
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US125507052026
Self-aligned Backside Gate Contact
International Business Machines Corporation
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US125387862026
Backside Contact for Semiconductor Device
International Business Machines Corporation
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US125357962026
Embedded Sensor Chips in 3D and 4D Printed Structures Through Selective Filament Infusion
International Business Machines Corporation
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US124905112025
Stacked Complementary Field Effect Transistors
International Business Machines Corporation
0 cites
US124905012025
Vertically Stacked Cascode Bipolar Junction Transistor (BJT) Pair Sensor
International Business Machines Corporation
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US124827502025
Power Distribution Network with Backside Power Rail
International Business Machines Corporation
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US124842972025
Forksheet Transistor with Dual Depth Late Cell Boundary Cut
International Business Machines Corporation
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US124842622025
Tunnel Field Effect Transistor Devices
International Business Machines Corporation
0 cites
US124713642025
Hybrid Stacked Field Effect Transistors
International Business Machines Corporation
0 cites
US124647962025
Gate Induced Drain Leakage Reduction in Finfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US124649572025
Textured Cobalt Aluminum/magnesium-aluminum-oxide Pedestal for Memory Devices
International Business Machines Corporation
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US124577802025
Semiconductor Device with Void Under Source/drain Region for Backside Contact
International Business Machines Corporation
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US124531462025
Epi Growth Uniformity with Source/drain Placeholder
International Business Machines Corporation
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US124396332025
VTFET with Controlled Fin Height
International Business Machines Corporation
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US124329682025
Nanowire Source/drain Formation for Nanosheet Device
International Business Machines Corporation
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US124083692025
Vertical Transport Field Effect Transistors Having Different Threshold Voltages Along the Channel
International Business Machines Corporation
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US124023422025
Nanosheet Device with T-shaped Dual Inner Spacer
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US124025442025
Antenna Assisted Reram Formation
International Business Machines Corporation
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US123826822025
Gate-all-around Nanosheet-fet with Variable Channel Geometries for Performance Optimization
International Business Machines Corporation
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US123641642025
Reactive Serial Resistance Reduction for Magnetoresistive Random-access Memory Devices
International Business Machines Corporation
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US123641742025
Global Heater for Phase Change Memory
International Business Machines Corporation
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US123290452025
Phase Change Memory Programming Current Leakage Reduction
International Business Machines Corporation
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US123242372025
Diffusion-break Region in Stacked-fet Integrated Circuit Device
International Business Machines Corporation
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US123177642025
Uniform Voltage Drop in Arrays of Memory Devices
International Business Machines Corporation
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US123175372025
Reduced Parasitic Capacitance Semiconductor Device Containing at Least One Local Interconnect Passthrough Structure
International Business Machines Corporation
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US123102632025
Phase Change Memory Gaps
International Business Machines Corporation
0 cites
US122934692025
Virtual Reality Design Navigation Using a Temporal Collaboration Dependency Map
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US122680162025
Buried Power Rail Formation for Vertical Field Effect Transistors
International Business Machines Corporation
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US122625522025
Source/drain Epitaxy Process in Stacked FET
International Business Machines Corporation
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US122551062025
Multi-vt Nanosheet Devices
INTERATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122455302025
Phase Change Memory with Concentric Ring-shaped Heater
International Business Machines Corporation
0 cites
US122373282025
Minimizing Shorting Between Finfet Epitaxial Regions
Adeia Semiconductor Solutions LLC
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US122365392025
Contextual Positioning in Virtual Space
International Business Machines Corporation
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US122306762025
Nanosheet Device with Tri-layer Bottom Dielectric Isolation
International Business Machines Corporation
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US122258352025
Resistive Switching Device Having a Protective Electrode Ring
International Business Machines Corporation
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US122198842025
Phase Change Memory with Conductive Rings
International Business Machines Corporation
0 cites
US121913522025
Using Different Work-functions to Reduce Gate-induced Drain Leakage Current in Stacked Nanosheet Transistors
International Business Machines Corporation
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US121838262024
Vertical Field Effect Transistor with Low-resistance Bottom Source-drain Contact
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US121764342024
Strained Semiconductor FET Devices with Epitaxial Quality Improvement
International Business Machines Corporation
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US121563952024
Metal Gate Patterning for Logic and SRAM in Nanosheet Devices
International Business Machines Corporation
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US121559672024
Contextual Positioning in Virtual Space
International Business Machines Corporation
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US121549852024
Moon-shaped Bottom Spacer for Vertical Transport Field Effect Transistor (VTFET) Devices
International Business Machines Corporation
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US121548992024
Darlington Pair Bipolar Junction Transistor Sensor
International Business Machines Corporation
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US121425262024
Stacked Device with Buried Interconnect
International Business Machines Corporation
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US121442712024
Back End of Line Embedded RRAM Structure with Low Forming Voltage
International Business Machines Corporation
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US121442702024
Back End of Line Embedded RRAM Structure with Grain Growth Enhancement
International Business Machines Corporation
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US121366712024
Gate-all-around Field-effect Transistor Having Source Side Lateral End Portion Smaller Than a Thickness of Channel Portion and Drain Side Lateral End Portion
International Business Machines Corporation
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US121274822024
Multi-state SOT-MRAM Structure
International Business Machines Corporation
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US121186622024
Optimizing Computer-based Generation of Three-dimensional Virtual Objects
International Business Machines Corporation
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US121086862024
Paramagnetic Hexagonal Metal Phase Coupling Spacer
International Business Machines Corporation
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US121006532024
Resistance Tunable Fuse Structure Formed by Embedded Thin Metal Layers
International Business Machines Corporation
0 cites
US121007442024
Wrap Around Contact Process Margin Improvement with Early Contact Cut
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US121007662024
Integrated Short Channel Omega Gate Finfet and Long Channel Finfet
International Business Machines Corporation
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US120807142024
Buried Local Interconnect Between Complementary Field-effect Transistor Cells
International Business Machines Corporation
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US120806402024
Self-aligned via to Metal Line for Interconnect
International Business Machines Corporation
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US120756272024
AI Accelerator with MRAM, PCM, and Recessed PCM Bottom Electrode
International Business Machines Corporation
0 cites
US120266052024
Fefet Unit Cells for Neuromorphic Computing
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US120162512024
Spin-orbit Torque and Spin-transfer Torque Magnetoresistive Random-access Memory Stack
International Business Machines Corporation
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US120094352024
Integrated Nanosheet Field Effect Transistors and Floating Gate Memory Cells
International Business Machines Corporation
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US120093952024
Self-aligned Block for Vertical Fets
International Business Machines Corporation
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US120094222024
Self Aligned Top Contact for Vertical Transistor
International Business Machines Corporation
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US119904122024
Buried Power Rails Located in a Base Layer Including First, Second, and Third Etch Stop Layers
INTERNATIONAL BUSINESS MACHINES CORPORATION
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USRE0499542024
Fabrication of Nano-sheet Transistors with Different Threshold Voltages
TESSERA LLC
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US119570692024
Contact Resistance of a Metal Liner in a Phase Change Memory Cell
International Business Machines Corporation
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US119423882024
Temperature-assisted Device with Integrated Thin-film Heater
International Business Machines Corporation
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US119294042024
Transistor Gates Having Embedded Metal-insulator-metal Capacitors
International Business Machines Corporation
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US119157342024
Spin-orbit-torque Magnetoresistive Random-access Memory with Integrated Diode
International Business Machines Corporation
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US119107342024
Phase Change Memory Cell with Ovonic Threshold Switch
International Business Machines Corporation
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US119014492024
Series Connected Stacked Vertical Transistors for High Voltage Applications
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118944442024
Secure Chip Identification Using Random Threshold Voltage Variation in a Field Effect Transistor Structure as a Physically Unclonable Function
International Business Machines Corporation
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US118944332024
Method and Structure to Improve Stacked FET Bottom EPI Contact
International Business Machines Corporation
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US118878902024
Partial Self-aligned Contact for MOL
International Business Machines Corporation
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US118815052024
Tri-layer STI Liner for Nanosheet Leakage Control
International Business Machines Corporation
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US118698932024
Stacked Field Effect Transistor with Wrap-around Contacts
International Business Machines Corporation
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US118699832024
Low Voltage/power Junction FET with All-around Junction Gate
International Business Machines Corporation
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US118698122024
Stacked Complementary Field Effect Transistors
International Business Machines Corporation
0 cites
US118627102024
Vertical Transistor Including Symmetrical Source/drain Extension Junctions
International Business Machines Corporation
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US118551482023
Vertical Field Effect Transistor with Dual Threshold Voltage
International Business Machines Corporation
0 cites
US118551802023
Gate Induced Drain Leakage Reduction in Finfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118482642023
Semiconductor Structure with Stacked Vias Having Dome-shaped Tips
International Business Machines Corporation
0 cites
US118308772023
Co-integrated Channel and Gate Formation Scheme for Nanosheet Transistors Having Separately Tuned Threshold Voltages
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US118174972023
Vertical Field Effect Transistor Inverter with Single Fin Device
International Business Machines Corporation
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US118188862023
Low Program Voltage Flash Memory Cells with Embedded Heater in the Control Gate
International Business Machines Corporation
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US117988672023
Half Buried Nfet/pfet Epitaxy Source/drain Strap
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US118006982023
Semiconductor Structure with Embedded Capacitor
International Business Machines Corporation
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US117912902023
Physical Unclonable Function for Secure Integrated Hardware Systems
International Business Machines Corporation
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US117569962023
Formation of Wrap-around-contact for Gate-all-around Nanosheet FET
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US117570362023
Moon-shaped Bottom Spacer for Vertical Transport Field Effect Transistor (VTFET) Devices
International Business Machines Corporation
0 cites
US117422462023
Local Isolation of Source/drain for Reducing Parasitic Capacitance in Vertical Field Effect Transistors
International Business Machines Corporation
0 cites
US117423542023
Top Epitaxial Layer and Contact for VTFET
International Business Machines Corporation
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US117424252023
Finfet Device with Partial Interface Dipole Formation for Reduction of Gate Induced Drain Leakage
International Business Machines Corporation
0 cites
US117373792023
Antenna Assisted Reram Formation
International Business Machines Corporation
0 cites
US117372892023
High Density Reram Integration with Interconnect
International Business Machines Corporation
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US117356282023
Nanosheet Metal-oxide Semiconductor Field Effect Transistor with Asymmetric Threshold Voltage
International Business Machines Corporation
0 cites
US117354802023
Transistor Having Source or Drain Formation Assistance Regions with Improved Bottom Isolation
International Business Machines Corporation
0 cites
US117157942023
VTFET with Cell Height Constraints
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US117119892023
Phase Change Memory
International Business Machines Corporation
0 cites
US117119822023
Laser Anneal for MRAM Encapsulation Enhancement
International Business Machines Corporation
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US116978892023
Three-dimensionally Stretchable Single Crystalline Semiconductor Membrane
International Business Machines Corporation
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US116950042023
Vertical Bipolar Junction Transistor and Vertical Field Effect Transistor with Shared Floating Region
International Business Machines Corporation
0 cites
US116886462023
Reduced Source/drain Coupling for CFET
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US116827182023
Vertical Bipolar Junction Transistor with All-around Extrinsic Base and Epitaxially Graded Intrinsic Base
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116839412023
Resistive Random Access Memory Integrated with Vertical Transport Field Effect Transistors
International Business Machines Corporation
0 cites
US116768942023
Resistance Tunable Fuse Structure Formed by Embedded Thin Metal Layers
International Business Machines Corporation
0 cites
US116659832023
Phase Change Memory Cell with Ovonic Threshold Switch
International Business Machines Corporation
0 cites
US116644552023
Wrap-around Bottom Contact for Bottom Source/drain
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116643752023
Minimizing Shorting Between Finfet Epitaxial Regions
Tessera LLC
0 cites
US116642712023
Dual Damascene with Short Liner
International Business Machines Corporation
0 cites
US116597802023
Phase Change Memory Structure with Efficient Heating System
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116463722023
Vertical Transistor Floating Body One Transistor DRAM Memory Cell
International Business Machines Corporation
0 cites
US116463622023
Vertical Transport Field-effect Transistor Structure Having Increased Effective Width and Self-aligned Anchor for Source/drain Region Formation
International Business Machines Corporation
0 cites
US116314622023
Temperature Assisted Programming of Flash Memory for Neuromorphic Computing
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116212972023
Stackable Symmetrical Operation Memory Bit Cell Structure with Bidirectional Selectors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116213322023
Wraparound Contact to a Buried Power Rail
International Business Machines Corporation
0 cites
US116056732023
Dual Resistive Random-access Memory with Two Transistors
International Business Machines Corporation
0 cites
US115946172023
Vertical Reconfigurable Field Effect Transistor
International Business Machines Corporation
0 cites
US115878372023
Oxygen Vacancy Passivation in High-k Dielectrics for Vertical Transport Field Effect Transistor
International Business Machines Corporation
0 cites
US115881032023
Resistive Memory Array
International Business Machines Corporation
0 cites
US115750252023
Vertical Field Effect Transistor with Self-aligned Source and Drain Top Junction
International Business Machines Corporation
0 cites
US115750282023
Stacked Vertical Transport Field Effect Transistor Electrically Erasable Programmable Read Only Memory (EEPROM) Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US115750232023
Secure Chip Identification Using Random Threshold Voltage Variation in a Field Effect Transistor Structure as a Physically Unclonable Function
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US115694382023
Magnetoresistive Random-access Memory Device
International Business Machines Corporation
0 cites
US115630822023
Reduction of Drain Leakage in Nanosheet Device
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US115576512023
Nanosheet Transistors with Inner Airgaps
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US115576752023
Reduction of Bottom Epitaxy Parasitics for Vertical Transport Field Effect Transistors
International Business Machines Corporation
0 cites
US115576632023
Twin Gate Tunnel Field-effect Transistor (FET)
International Business Machines Corporation
0 cites
US115522432023
MRAM Structure with Ternary Weight Storage
International Business Machines Corporation
0 cites
US115517502023
Enhanced State Dual Memory Cell
International Business Machines Corporation
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