Patents/Inventors

Alexander M. Derrickson

Saratoga Springs, NYUS20 patents

21 Patents

US124956232025
Lateral Phototransistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US124084172025
Forksheet Semiconductor Structure Including at Least One Bipolar Junction Transistor and Method
Globalfoundries U.S. Inc.
0 cites
US123493752025
Lateral Bipolar Transistors with Gate Structure Aligned to Extrinsic Base
GLOBALFOUNDRIES U.S. Inc.
0 cites
US123425552025
Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121764262024
Bipolar Transistor Structure on Semiconductor Fin and Methods to Form Same
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119905352024
Lateral Heterojunction Bipolar Transistor with Emitter And/or Collector Regrown from Substrate and Method
Globalfoundries U.S. Inc.
0 cites
US119490042024
Lateral Bipolar Transistors with Gate Structure Aligned to Extrinsic Base
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119161092024
Bipolar Transistor Structures with Base Having Varying Horizontal Width and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US119088982024
Lateral Bipolar Transistor Structure with Base Layer of Varying Horizontal Width and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US118880502024
Lateral Bipolar Transistor Structure with Inner and Outer Spacers and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US118813952024
Bipolar Transistor Structure on Semiconductor Fin and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US118627172024
Lateral Bipolar Transistor Structure with Superlattice Layer and Method to Form Same
Globalfoundries U.S. Inc.
0 cites
US118551972023
Vertical Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118430442023
Bipolar Transistor Structure on Semiconductor Fin and Methods to Form Same
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118374602023
Lateral Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118376532023
Lateral Bipolar Junction Transistor Including a Stress Layer and Method
Globalfoundries U.S. Inc.
0 cites
US118045422023
Annular Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117990212023
Lateral Bipolar Transistor Structure with Marker Layer for Emitter and Collector
GLOBALFOUNDRIES U.S. Inc.
0 cites
US116463612023
Electrical Isolation Structure Using Reverse Dopant Implantation from Source/drain Region in Semiconductor Fin
Globalfoundries U.S. Inc.
0 cites
US115880442023
Bipolar Junction Transistor (BJT) Structure and Related Method
Globalfoundries U.S. Inc.
0 cites
US115750292023
Lateral Bipolar Junction Transistor and Method
Globalfoundries U.S. Inc.
0 cites