Patents/Inventors

Alexander L. Martin

Greenfield Center, NYUS1 patent

2 Patents

US115880442023
Bipolar Junction Transistor (BJT) Structure and Related Method
Globalfoundries U.S. Inc.
0 cites
US115750292023
Lateral Bipolar Junction Transistor and Method
Globalfoundries U.S. Inc.
0 cites