Albert Birner

8 Patents

• US125817122026

  Group III Nitride-based Transistor Device Having a Conductive Redistribution Structure

  Infineon Technologies AG

  0 cites
• US122782752025

  Selective Laser Annealing Method

  Infineon Technologies AG

  0 cites
• US122306892025

  Semiconductor Device and Method for Fabricating a Semiconductor Wafer

  Infineon Technologies AG

  0 cites
• US120878302024

  Group III Nitride Device and Method of Fabricating a Group III Nitride-based Device

  INFINEON TECHNOLOGIES AG

  0 cites
• US119294052024

  Group III Nitride-based Transistor Device Having a Field Plate

  Infineon Technologies AG

  0 cites
• US118699632024

  Semiconductor Device and Method of Fabricating a Semiconductor Device

  Infineon Technologies AG

  0 cites
• US117283892023

  Group III Nitride Device Having an Ohmic Contact

  Infineon Technologies AG

  0 cites
• US115814182023

  Selective Thermal Annealing Method

  Infineon Technologies AG

  0 cites