6 Patents
- US125751892026Silicon-controlled Rectifiers with a Segmented Floating Region
Globalfoundries U.S. Inc.
0 cites - US119845032024High-voltage Devices Integrated on Semiconductor-on-insulator Substrate
Globalfoundries Dresden Module One LLC &Co. KG
0 cites - 0 cites
- US118376052023Structure Including Transistor Using Buried Insulator Layer as Gate Dielectric and Trench Isolations in Source and Drain
Globalfoundries U.S. Inc.
0 cites - US116109992023Floating-gate Devices in High Voltage Applications
GLOBALFOUNDRIES DRESDEN MODULE ONE LIMITED LIABILITY COMPANY & Co. KG
0 cites - US115521922023High-voltage Devices Integrated on Semiconductor-on-insulator Substrate
GLOBALFOUNDRIES DRESDEN MODULE ONE LLC & Co. KG
0 cites