Patents/Inventors

Akira Goda

SetagayaJP93 patents

84 Patents

US126091612026
Programming Erase Blocks Coupled to a Same String
Micron Technology, Inc.
0 cites
US125974722026
Selectively Erasing One of Multiple Erase Blocks Coupled to a Same String Using Gate Induced Drain Leakage
Micron Technology, Inc.
0 cites
US125966462026
Memory Management Among Multiple Erase Blocks Coupled to a Same String
Micron Technology, Inc.
0 cites
US125913712026
Memory Sub-system for Memory Cell In-field Touch-up
Micron Technology, Inc.
0 cites
US125855832026
Multiple Write Programming for a Segment of a Memory Device
Micron Technology, Inc.
0 cites
US125734692026
Read Pass Voltage Adjustment Among Multiple Erase Blocks Coupled to a Same String
Micron Technology, Inc.
0 cites
US125610802026
Resequencing Data Programmed to Multiple Level Memory Cells at a Memory Sub-system
Micron Technology, Inc.
0 cites
US125486302026
Media Management Scanning with Unified Criteria to Alleviate Fast and Latent Read Disturb
Micron Technology, Inc.
0 cites
US125421882026
Boost-by-deck During a Program Operation on a Memory Device
Micron Technology, Inc.
0 cites
US125302872026
Read Disturb Tracking Among Multiple Erase Blocks Coupled to a Same String
Micron Technology, Inc.
0 cites
US125302882026
Read Disturb Tracking Among Multiple Erase Blocks Coupled to a Same String
Micron Technology, Inc.
0 cites
US125048862025
Self-optimizing Corrective Read Offsets with Lateral Charge Migration Proxies
Micron Technology, Inc.
0 cites
US125058972025
Program Refresh with Gate-induced Drain Leakage
Micron Technology, Inc.
0 cites
US124988862025
Buffer Allocation for Reducing Block Transit Penalty
MICRON TECHNOLOGY, Inc.
0 cites
US124814632025
Multiple-pass Programming of Memory Cells Using Temporary Parity Generation
MICRON TECHNOLOGY, Inc.
0 cites
US124618182025
Temporary Parity Buffer Allocation for Zones in a Parity Group
Micron Technology, Inc.
0 cites
US124302582025
Padding Cached Data with Valid Data for Memory Flush Commands
Micron Technology, Inc.
0 cites
US124230022025
Selectively Programming Retired Wordlines of a Memory Device
Micron Technology, Inc.
0 cites
US124170352025
Modified Read Counter Incrementing Scheme in a Memory Sub-system
Micron Technology, Inc.
0 cites
US123877812025
Corrective Reads with Improved Recovery from Data Retention Loss
Micron Technology, Inc.
0 cites
US123549822025
Memory Devices with Backside Bond Pads Under a Memory Array
0 cites
US123341422025
Sacrificial Strings in a Memory Device to Detect Read Disturb
Micron Technology, Inc.
0 cites
US123341532025
Adaptive Pre-read Management in Multi-pass Programming
MICRON TECHNOLOGY, Inc.
0 cites
US123341542025
Write-once Memory Encoded Data
Micron Technology, Inc.
0 cites
US123270482025
Using Duplicate Data for Improving Error Correction Capability
Micron Technology, Inc.
0 cites
US123224502025
Memory Programming Using Consecutive Coarse-fine Programming Operations of Threshold Voltage Distributions
Micron Technology, Inc.
0 cites
US123070902025
Memory Device Programming Technique for Increased Bits per Cell
Micron Technology, Inc.
0 cites
US122937902025
Memory for Programming Data States of Memory Cells
Micron Technology, Inc.
0 cites
US122848052025
String Driver Assemblies Including Two-dimensional Materials, and Related Memory Devices
Lodestar Licensing Group LLC
0 cites
US122664072025
Conditional Valley Tracking During Corrective Reads
Micron Technology, Inc.
0 cites
US122493642025
Apparatus with Non-linear Delay Variations for Scheduling Memory Refresh Operations and Methods for Operating the Same
Micron Technology, Inc.
0 cites
US122169152025
Adaptive Read Disturb Scan
Micron Technology, Inc.
0 cites
US122177992025
Parallelized Defect Detection Across Multiple Sub-blocks in a Memory Device
Micron Technology, Inc.
0 cites
US122197722025
Multi-gate String Drivers Having Shared Pillar Structure
0 cites
US121990702025
3D NAND Memory Device Devices and Related Electronic Systems
Lodestar Licensing Group LLC
0 cites
US122009382025
Driver Placement in Memories Having Stacked Memory Arrays
0 cites
US121701132024
Concurrent Programming of Retired Wordline Cells with Dummy Data
Micron Technology, Inc.
0 cites
US121484742024
Apparatus and Methods Including Source Gates
Micron Technology, Inc.
0 cites
US121310282024
Programming Selective Word Lines During an Erase Operation in a Memory Device
Micron Technology, Inc.
0 cites
US121310602024
Quick Charge Loss Mitigation Using Two-pass Controlled Delay
MICRON TECHNOLOGY, Inc.
0 cites
US121317882024
Read Counter Adjustment for Delaying Read Disturb Scans
MICRON TECHNOLOGY, Inc.
0 cites
US121321162024
Apparatuses Including Multiple Channel Materials Within a Tier Stack
0 cites
US120997252024
Code Rate as Function of Logical Saturation
Micron Technology, Inc.
0 cites
US121004542024
Memory Device Including In-tier Driver Circuit
Micron Technology, Inc.
0 cites
US120860282024
Reduction of Errors in Data Retrieved from a Memory Device to Apply an Error Correction Code of a Predetermined Code Rate
Micron Technology, Inc.
0 cites
US120795172024
Buffer Allocation for Reducing Block Transit Penalty
MICRON TECHNOLOGY, Inc.
0 cites
US120807002024
Microelectronic Devices Including Control Logic Regions
Micron Technology, Inc.
0 cites
US120672902024
On-die Cross-temperature Management for a Memory Device
Micron Technology, Inc.
0 cites
US120680342024
Two-pass Corrective Programming for Memory Cells That Store Multiple Bits and Power Loss Management for Two-pass Corrective Programming
MICRON TECHNOLOGY, Inc.
0 cites
US120682722024
Microelectronic Devices Having a Memory Array Region, a Control Logic Region, and Signal Routing Structures
0 cites
US120623962024
Memory Devices Having Source Lines Directly Coupled to Body Regions and Methods
0 cites
US120514792024
Memory Block Programming Using Defectivity Information
MICRON TECHNOLOGY, Inc.
0 cites
US120260522024
Partitioned Memory Having Error Detection Capability
0 cites
US120290392024
Integrated Structures Comprising Vertical Channel Material and Having Conductively-doped Semiconductor Material Directly Against Lower Sidewalls of the Channel Material
0 cites
US120195572024
Padding Cached Data with Valid Data for Memory Flush Commands
Micron Technology, Inc.
0 cites
US120017212024
Multiple-pass Programming of Memory Cells Using Temporary Parity Generation
MICRON TECHNOLOGY, Inc.
0 cites
US119949472024
Multi-layer Code Rate Architecture for Special Event Protection with Reduced Performance Penalty
Micron Technology, Inc.
0 cites
US119607222024
Memory Device Programming Technique for Increased Bits per Cell
Micron Technology, Inc.
0 cites
US119439192024
Microelectronic Devices Including Two-dimensional Materials, and Related Memory Devices and Electronic Systems
0 cites
US119358532024
Memory Devices with Backside Bond Pads Under a Memory Array
0 cites
US119220292024
Modified Read Counter Incrementing Scheme in a Memory Sub-system
Micron Technology, Inc.
0 cites
US119229932024
Read-time Overhead and Power Optimizations with Command Queues in Memory Device
Micron Technology, Inc.
0 cites
US119089482024
Memory Devices Including Indium-containing Materials, and Related Electronic Systems
Micron Technology, Inc.
0 cites
US118999662024
Implementing Fault Tolerant Page Stripes on Low Density Memory Systems
Micron Technology, Inc.
0 cites
US118612332024
Using Duplicate Data for Improving Error Correction Capability
Micron Technology, Inc.
0 cites
US118056532023
Driver Placement in Memories Having Stacked Memory Arrays
Micron Technology, Inc.
0 cites
US117896292023
Separate Partition for Buffer and Snapshot Memory
Micron Technology, Inc.
0 cites
US117909912023
Sequential Voltage Ramp-down of Access Lines of Non-volatile Memory Device
Micron Technology, Inc.
0 cites
US117752082023
Partitions Within Snapshot Memory for Buffer and Snapshot Memory
Micron Technology, Inc.
0 cites
US117766292023
Threshold Voltage Based on Program/erase Cycles
Micron Technology, Inc.
0 cites
US117638892023
Multi-decks Memory Device Including Inter-deck Switches
Micron Technology, Inc.
0 cites
US117107242023
Methods of Forming Microelectronic Devices, and Related Microelectronic Devices and Electronic Systems
0 cites
US117052052023
Memory Devices Having Source Lines Directly Coupled to Body Regions and Methods
Micron Technology, Inc.
0 cites
US116947632023
Read Voltage Calibration for Copyback Operation
Micron Technology, Inc.
0 cites
US116631042023
Threshold Voltage Distribution Adjustment for Buffer
Micron Technology, Inc.
0 cites
US116261622023
Partial Block Memory Operations
Micron Technology, Inc.
0 cites
US116158382023
Programming Memory Cells at Two Different Levels in Parallel
Micron Technology, Inc.
0 cites
US115879192023
Microelectronic Devices, Related Electronic Systems, and Methods of Forming Microelectronic Devices
Micron Technology, Inc.
0 cites
US115879482023
Integrated Assemblies Having Vertically-spaced Channel Material Segments, and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US115689212023
Read-time Overhead and Power Optimizations with Command Queues in Memory Device
Micron Technology, Inc.
0 cites
US115692662023
Integrated Structures Comprising Vertical Channel Material and Having Conductively-doped Semiconductor Material Directly Against Lower Sidewalls of the Channel Material
Micron Technology, Inc.
0 cites
US115562672023
Data Management During a Copyback Operation
Micron Technology, Inc.
0 cites
US115564172023
Reduction of Errors in Data Retrieved from a Memory Device to Apply an Error Correction Code of a Predetermined Code Rate
Micron Technology, Inc.
0 cites
US115454562023
Microelectronic Devices, Electronic Systems Having a Memory Array Region and a Control Logic Region, and Methods of Forming Microelectronic Devices
Micron Technology, Inc.
0 cites