Patents/Inventors

Abhishek A. Sharma

Hillsboro, ORUS105 patents

98 Patents

US126160602026
Stacked Random-access Memory Devices with Refrigeration
Intel Corporation
0 cites
US126160122026
Stacked Random Access Memory Devices with Multilayer Continuous Vias
Intel Corporation
0 cites
US126044792026
Two Transistor Capacitorless Memory Cell with Stacked Thin-film Transistors
Intel Corporation
0 cites
US125990322026
Bilayer Memory Stacking with Lines Shared Between Bottom and Top Memory Layers
Intel Corporation
0 cites
US125881892026
Memory Devices with Vertical Transistors
Intel Corporation
0 cites
US125754012026
Integrated Circuit Devices with Angled Transistors and Angled Routing Tracks
Intel Corporation
0 cites
US125751652026
Transistor Devices with High-k Perovskite Gate Dielectrics
Intel Corporation
0 cites
US125637242026
Two Transistor Memory Cells with Source-drain Coupling in One Transistor
Intel Corporation
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US125503342026
Memory with One Access Transistor for Multiple Hysteretic Capacitors
Intel Corporation
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US125433492026
Transistors with Ferroelectric Gates
Intel Corporation
0 cites
US125384702026
Structures and Methods for Memory Cells
Intel Corporation
0 cites
US125325262026
Metallic Sealants in Transistor Arrangements
Intel Corporation
0 cites
US125061272025
Package Architecture of Photonic System with Vertically Stacked Dies Having Planarized Edges
Intel Corporation
0 cites
US125061282025
Package Architecture of Scalable Compute Wall Having Compute Bricks with Vertically Stacked Dies
Intel Corporation
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US124712892025
Diagonal Memory with Vertical Transistors and Wrap-around Control Lines
Intel Corporation
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US124713342025
Integrated Circuit Devices with Angled Transistors Formed Based on Angled Wafers
Intel Corporation
0 cites
US124712882025
Three-dimensional Nanoribbon-based Hysteretic Memory
Intel Corporation
0 cites
US124697672025
Integrated Planar Transistors and Memory Cell Array Architectures
Intel Corporation
0 cites
US124531232025
Transistor with Front-side and Back-side Contacts and Routing
Intel Corporation
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US124462082025
Multilevel Wordline Assembly for Embedded DRAM
Intel Corporation
0 cites
US124329482025
Compositional Engineering of Schottky Diode
Intel Corporation
0 cites
US124262472025
Capacitor Connections in Dielectric Layers
Intel Corporation
0 cites
US124128352025
Back-side Power Delivery with Glass Support at the Front
Intel Corporation
0 cites
US124069562025
Bilayer Memory Stacking with Computer Logic Circuits Shared Between Bottom and Top Memory Layers
Intel Corporation
0 cites
US124009972025
Hybrid Manufacturing with Modified Via-last Process
Intel Corporation
0 cites
US124024012025
Integrated Circuit Devices with Finfets Over Gate-all-around Transistors
Intel Corporation
0 cites
US123961552025
Backend Memory with Air Gaps in Upper Metal Layers
Intel Corporation
0 cites
US123811932025
Integrated Circuit Assemblies
Intel Corporation
0 cites
US123763422025
Passivation Layers for Thin Film Transistors
Intel Corporation
0 cites
US123746662025
Integrated Circuit Assemblies with Stacked Compute Logic and Memory Dies
Intel Corporation
0 cites
US123425512025
Capacitor Architectures in Semiconductor Devices
Intel Corporation
0 cites
US123289462025
ESD Protection Decoupled from Diffusion
Intel Corporation
0 cites
US123278092025
Vertically Stacked and Bonded Memory Arrays
Intel Corporation
0 cites
US123100322025
Stacked Backend Memory with Resistive Switching Devices
Intel Corporation
0 cites
US122782292025
Hybrid Manufacturing for Integrated Circuit Devices and Assemblies
Intel Corporation
0 cites
US122389132025
Two Transistor Memory Cell Using Stacked Thin-film Transistors
Intel Corporation
0 cites
US121970072025
Multi-layered Optical Integrated Circuit Assembly with a Monocrystalline Waveguide and Lower Crystallinity Bonding Layer
Intel Corporation
0 cites
US121913952025
Dual Gate Control for Trench Shaped Thin Film Transistors
Intel Corporation
0 cites
US121838312024
Self-aligned Contacts for Thin Film Transistors
Intel Corporation
0 cites
US121836682024
Thin-film Transistors and MIM Capacitors in Exclusion Zones
Intel Corporation
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US121761472024
Three-dimensional Capacitors with Double Metal Electrodes
Intel Corporation
0 cites
US121702732024
Integrated Circuit Assemblies with Direct Chip Attach to Circuit Boards
Intel Corporation
0 cites
US121502972024
Thin Film Transistors Having a Backside Channel Contact for High Density Memory
Intel Corporation
0 cites
US121470832024
Hybrid Manufacturing for Integrating Photonic and Electronic Components
Intel Corporation
0 cites
US121487342024
Transistors, Memory Cells, and Arrangements Thereof
Intel Corporation
0 cites
US121259172024
Thin Film Transistors Having Double Gates
Intel Corporation
0 cites
US121208652024
Arrays of Double-sided Dram Cells Including Capacitors on the Frontside and Backside of a Stacked Transistor Structure
Intel Corporation
0 cites
US121194092024
Multi-layer Crystalline Back Gated Thin Film Transistor
Intel Corporation
0 cites
US121144792024
Three-dimensional Memory Arrays with Layer Selector Transistors
Intel Corporation
0 cites
US120877502024
Stacked-substrate FPGA Semiconductor Devices
Intel Corporation
0 cites
US120807812024
Fabrication of Thin Film Fin Transistor Structure
Intel Corporation
0 cites
US120806432024
Integrated Circuit Structures Having Differentiated Interconnect Lines in a Same Dielectric Layer
Intel Corporation
0 cites
US120683192024
High Performance Semiconductor Oxide Material Channel Regions for NMOS
Intel Corporation
0 cites
US120588472024
Monolithic Memory Stack
Intel Corporation
0 cites
US120573882024
Integrated Circuit Structures Having Linerless Self-forming Barriers
Intel Corporation
0 cites
US120094332024
Multi-dielectric Gate Stack for Crystalline Thin Film Transistors
Intel Corporation
0 cites
US119978472024
Thin Film Transistors with Spacer Controlled Gate Length
Intel Corporation
0 cites
US119918732024
Capacitor Separations in Dielectric Layers
Intel Corporation
0 cites
US119788042024
Recessed Thin-channel Thin-film Transistor
Intel Corporation
0 cites
US119555602024
Passivation Layers for Thin Film Transistors and Methods of Fabrication
Intel Corporation
0 cites
US119504072024
Memory Architecture with Shared Bitline at Back-end-of-line
Intel Corporation
0 cites
US119233712024
Voltage Regulator Circuit Including One or More Thin-film Transistors
Intel Corporation
0 cites
US119014042024
Capacitor Architectures in Semiconductor Devices
Intel Corporation
0 cites
US118958462024
Double-gated Ferroelectric Field-effect Transistor
Intel Corporation
0 cites
US118958242024
Vertical 1T-1C DRAM Array
Intel Corporation
0 cites
US118880342024
Transistors with Metal Chalcogenide Channel Materials
Intel Corporation
0 cites
US118627302024
Top-gate Doped Thin Film Transistor
Intel Corporation
0 cites
US118627282024
Dual Gate Control for Trench Shaped Thin Film Transistors
Intel Corporation
0 cites
US118376482023
Stacked Thin Film Transistors with Nanowires
Intel Corporation
0 cites
US118324382023
Capacitor Connections in Dielectric Layers
Intel Corporation
0 cites
US118174422023
Hybrid Manufacturing for Integrated Circuit Devices and Assemblies
Intel Corporation
0 cites
US118126002023
Vertical Memory Cell with Self-aligned Thin Film Transistor
Intel Corporation
0 cites
US117913752023
Capacitor Architectures in Semiconductor Devices
Intel Corporation
0 cites
US117770292023
Vertical Transistors for Ultra-dense Logic and Memory Applications
Intel Corporation
0 cites
US117642822023
Antiferroelectric Gate Dielectric Transistors and Their Methods of Fabrication
Intel Corporation
0 cites
US117643032023
Thin Film Transistors Having Double Gates
Intel Corporation
0 cites
US117643062023
Multi-layer Crystalline Back Gated Thin Film Transistor
Intel Corporation
0 cites
US117568862023
Hybrid Manufacturing of Microeletronic Assemblies with First and Second Integrated Circuit Structures
Intel Corporation
0 cites
US117587112023
Thin-film Transistor Embedded Dynamic Random-access Memory with Shallow Bitline
Intel Corporation
0 cites
US117514022023
Ferroelectric Capacitors with Backend Transistors
Intel Corporation
0 cites
US117424292023
Thin-film Transistors with Low Contact Resistance
Intel Corporation
0 cites
US117355952023
Thin Film Tunnel Field Effect Transistors Having Relatively Increased Width
Intel Corporation
0 cites
US117217352023
Thin Film Transistors Having U-shaped Features
Intel Corporation
0 cites
US117217662023
Metal-assisted Single Crystal Transistors
Intel Corporation
0 cites
US116902112023
Thin Film Transistor Based Memory Cells on Both Sides of a Layer of Logic Devices
Intel Corporation
0 cites
US116902152023
Self-aligned Bitline and Capacitor via Formation
Intel Corporation
0 cites
US116721332023
Vertically Stacked Memory Elements with Air Gap
Intel Corporation
0 cites
US116582222023
Thin Film Transistor with Charge Trap Layer
Intel Corporation
0 cites
US116582082023
Thin Film Transistors for High Voltage Applications
Intel Corporation
0 cites
US116526062023
Advanced Encryption Standard Semiconductor Devices Fabricated on a Stacked-substrate
Intel Corporation
0 cites
US116520472023
Intermediate Separation Layers at the Back-end-of-line
Intel Corporation
0 cites
US116408392023
1S-1T Ferroelectric Memory
Intel Corporation
0 cites
US116409952023
Ferroelectric Field Effect Transistors (fefets) Having Band-engineered Interface Layer
Intel Corporation
0 cites
US116108942023
Capacitor Separations in Dielectric Layers
Intel Corporation
0 cites
US116056712023
Double Selector Element for Low Voltage Bipolar Memory Devices
Intel Corporation
0 cites
US115881022023
Semiconductor Material for Resistive Random Access Memory
Intel Corporation
0 cites
US115692432023
Stacked-substrate DRAM Semiconductor Devices
Intel Corporation
0 cites
US115576302023
Quantum Dot Devices with Selectors
Intel Corporation
0 cites