34 Patents
- US125788722026Dynamic Sensing Scheme to Compensate for Threshold Voltage Shift During Sensing in a Memory Device
Sandisk Technologies, Inc
0 cites - US125734562026Word Line Zone Based Unselect Word Line Bias to Enable Single-side Gate-induced Drain Leakage Erase
Sandisk Technologies, Inc.
0 cites - US125674712026Regular Transistor Threshold Voltage Refresh for Semi-circle Drain Side Select Gates
Sandisk Technologies, Inc.
0 cites - US125486262026Positive Sensing in Low Power Operation Mode in a Memory Device
Sandisk Technologies, Inc.
0 cites - US125370652026Reducing Time-tag Read Errors with Respect to Non-volatile Memory Structures
Sandisk Technologies, Inc.
0 cites - 0 cites
- US125058852025Plane and Block Location Dependent Voltage Biases in NAND Memory
Sandisk Technologies, Inc.
0 cites - US125058892025Methods to Improve Current Consumption and Read Time in Successive Reads
Sandisk Technologies, Inc.
0 cites - US124999482025Variable Foggy Verify Levels for Selected Checkpoint States for Non-volatile Memory Apparatuses
Sandisk Technologies, Inc.
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- US124942552025Real Time Ramp Rate Adjustment for Better Performance and Current Consumption Tradeoff
Sandisk Technologies, Inc.
0 cites - US124378152025Delayed Select Gate Ramp-up for Peak Read Current Consumption Reduction for Non-volatile Memory Apparatus
Sandisk Technologies, Inc.
0 cites - 0 cites
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- US123878002025Multi-stage Programming Techniques with Three States per Memory Cell Parity
Sandisk Technologies, Inc.
0 cites - 0 cites
- US123546822025Intermediate Re-verify for Achieving Tighter Threshold Voltage Distributions in a Memory Device
Sandisk Technologies, Inc.
0 cites - 0 cites
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- US120463052024Pre-position Dummy Word Line to Facilitate Write Erase Capability of Memory Apparatus
Sandisk Technologies LLC
0 cites - 0 cites
- US119728182024Refresh Frequency-dependent System-level Trimming of Verify Level Offsets for Non-volatile Memory
Sandisk Technologies, LLC
0 cites - US119615722024Edge Word Line Data Retention Improvement for Memory Apparatus with On-pitch Semi-circle Drain Side Select Gate Technology
Sandisk Technologies, LLC
0 cites - US119615732024Memory Device That Is Optimized for Operation at Different Temperatures
Sandisk Technologies, LLC
0 cites - US118940512024Temperature-dependent Word Line Voltage and Discharge Rate for Refresh Read of Non-volatile Memory
SANDISK TECHNOLOGIES LLC
0 cites - US118940672024Method to Fix Cumulative Read Induced Drain Side Select Gate Downshift in Memory Apparatus with On-pitch Drain Side Select Gate
SANDISK TECHNOLOGIES LLC
0 cites - US118940722024Two-side Staircase Pre-charge in Sub-block Mode of Three-tier Non-volatile Memory Architecture
SANDISK TECHNOLOGIES LLC
0 cites - 0 cites
- US117587182023Three Dimensional Memory Device Containing Truncated Channels and Method of Operating the Same with Different Erase Voltages for Different Bit Lines
SANDISK TECHNOLOGIES LLC
0 cites - 0 cites
- US115452262023Systems and Methods for Compensating for Erase Speed Variations Due to Semi-circle SGD
Sandisk Technologies LLC
0 cites