Abdullah N. Alodhayb

2 Patents

• US123566702025

  High Mobility Transistor with Algan Buffer Layer

  IMAM MOHAMMAD IBN SAUD ISLAMIC UNIVERSITY

  0 cites
• US122439282025

  P-gan High Electron Mobility Transistor (HEMT) with Mos2-based 2D Barrier

  IMAM MOHAMMAD IBN SAUD ISLAMIC UNIVERSITY

  0 cites