Patents/Assignees

TOYOTA TSUSHO CORPORATION

32 patents in portfolio

US12581873utility2026
Method of Manufacturing Sic Semiconductor Device and Sic Semiconductor Device
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US12571626utility2026
Method for Measuring Etching Amount, and Measurement System Therefor
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US12575380utility2026
Evaluation Method for Silicon Carbide Substrates
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US12540416utility2026
Method for Manufacturing a Semiconductor Substrate and Method for Suppressing Occurrence of Cracks in a Growth Layer
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US12534825utility2026
Sic Epitaxial Substrate Manufacturing Method and Manufacturing Device Therefor
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US12509795utility2025
Method for Manufacturing Aluminum Nitride Substrate, Aluminum Nitride Substrate, and Method for Forming Aluminum Nitride Layer
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US12460315utility2025
Method for Manufacturing Semiconductor Substrates and Method for Suppressing Introduction of Displacement to Growth Layer
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US12451348utility2025
Method and Device for Manufacturing Sic Substrate, and Method for Reducing Macro-step Bunching of Sic Substrate
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US12421624utility2025
Sic Substrate, Sic Epitaxial Substrate, Sic Ingot and Production Methods Thereof
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US12398038utility2025
Manufacturing Method of Modified Aluminum Nitride Raw Material, Modified Aluminum Nitride Raw Material, Manufacturing Method of Aluminum Nitride Crystals, and Downfall Defect Prevention Method
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US12385158utility2025
Method for Manufacturing a Semiconductor Substrate by Forming a Growth Layer on an Underlying Substrate Having Through Holes
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US12362175utility2025
Method for Manufacturing Sic Substrate
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US12325930utility2025
Manufacturing Device for Sic Semiconductor Substrate
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US12325936utility2025
Aluminum Nitride Substrate Manufacturing Method, Aluminum Nitride Substrate, and Method of Removing Strain Layer Introduced Into Aluminum Nitride Substrate by Laser Processing
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US12320030utility2025
Method of Using Sic Container
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US12255073utility2025
Silicon Carbide Substrate Manufacturing Method, Silicon Carbide Substrate, and Method of Removing Strain Layer Introduced Into Silicon Carbide Substrate by Laser Processing
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US12247319utility2025
Method for Producing a Sic Seed Crystal for Growth of a Sic Ingot by Heat-treating in a Main Container Made of a Sic Material
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US12237377utility2025
Sic Semiconductor Substrate, And, Production Method Therefor and Production Device Therefor
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US12237378utility2025
Method for Manufacturing Sic Substrate
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US12209328utility2025
Method of Manufacturing Semiconductor Substrate and Epitaxial Growth Method
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