Patents/Assignees

TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

3,601 patents in portfolio

US12154813utility2024
Electrostatic Chuck Sidewall Gas Curtain
0 cites
US12154809utility2024
Automated Material Handling Systems
0 cites
US12154808utility2024
System and Method for Wafer Manufacturing Process Management
0 cites
US12151213utility2024
Method of Manufacturing Semiconductor Devices Including the Steps of Removing One or More of the Nanotubes from the Stack of Nanotubes, And/or Removing Spacers That Surrounds Each of the Plurality of Nanotubes, and Forming Gate Dielectric And/or Gate Electrode to the Nanotubes
0 cites
US12153433utility2024
Systems and Methods for Raised Floor Automated Sensor Vehicles
0 cites
US12153339utility2024
Network Type Pellicle Membrane and Method for Forming the Same
0 cites
US12153337utility2024
Extreme Ultraviolet Mask with Tantalum Base Alloy Absorber
0 cites
US12147159utility2024
Semiconductor Device and Method of Manufacture
0 cites
US12148505utility2024
Memory Array Staircase Structure
0 cites
US12148236utility2024
Optical Sensor and Methods of Making the Same
0 cites
US12150306utility2024
Three-dimensional Memory Device and Method
0 cites
US12149211utility2024
Wireless Receiver
0 cites
US12149643utility2024
Device Signature Based on Trim and Redundancy Information
0 cites
US12148830utility2024
Method and Device for Boosting Performance of Finfets via Strained Spacer
0 cites
US12148843utility2024
Semiconductor Device with Treated Interfacial Layer on Silicon Germanium
0 cites
US12148832utility2024
Method of Forming Finfet with Low-dielectric-constant Gate Electrode Spacers
0 cites
US12148837utility2024
Semiconductor Devices
0 cites
US12148814utility2024
Semiconductor Device
0 cites
US12148812utility2024
Nano-sheet-based Devices Having Inner Spacer Structures or Gate Portions with Variable Dimensions
0 cites
US12148811utility2024
Method of Fabricating a Semiconductor Device Having Capacitor Material
0 cites

← PreviousPage 70 of 181Next →