- US11903214utility2024Three-dimensional Ferroelectric Random Access Memory Devices and Methods of Forming0 cites
- US11903216utility2024Three-dimensional Memory Device and Method0 cites
- US11903221utility2024Three Dimensional Semiconductor Device with Memory Stack0 cites
- US11894277utility2024Transistor Gates and Methods of Forming Thereof0 cites
- US11894381utility2024Structures and Methods for Trench Isolation0 cites
- US11894435utility2024Contact Plug Structure of Semiconductor Device and Method of Forming Same0 cites
- US11894437utility2024Hybrid Conductive Structures0 cites
- US11890718utility2024Removable Tray Assembly for CMP Systems0 cites
- US11894451utility2024Semiconductor Device0 cites
- US11894459utility2024Dual Gate Structures for Semiconductor Devices0 cites
- US11894241utility2024Heterogeneous Bonding Structure and Method Forming Same0 cites
- US11894250utility2024Method and System for Recognizing and Addressing Plasma Discharge During Semiconductor Processes0 cites
- US11894266utility2024Metal Capping Layer and Methods Thereof0 cites
- US11894274utility2024Dummy Fin with Reduced Height and Method Forming Same0 cites
- US11894312utility2024Semiconductor Packages and Method of Manufacture0 cites
- US11894318utility2024Semiconductor Device and Method of Manufacture0 cites
- US11894319utility2024Extended Seal Ring Structure on Wafer-stacking0 cites
- US11894367utility2024Integrated Circuit Including Dipole Incorporation for Threshold Voltage Tuning in Transistors0 cites
- US11894370utility2024Semiconductor Structure Cutting Process and Structures Formed Thereby0 cites
- US11887851utility2024Method for Forming and Using Mask0 cites