Patents/Assignees

TAIWAN SEMICONDUCTOR CO., Ltd.

6 patents in portfolio

US12199153utility2025
High Voltage Edge Termination Structure for Power Semiconductor Devices
0 cites
US12154955utility2024
High Voltage Edge Termination Structure for Power Semiconductor Devices and Manufacturing Method Thereof
0 cites
US12087831utility2024
High Voltage Edge Termination Structure for Power Semiconductor Devices and Manufacturing Method Thereof
0 cites
US11640992utility2023
Shielded Gate Trench MOSFET Devices
0 cites
US11640993utility2023
Shielded Gate Trench MOSFET Devices
0 cites
US11640994utility2023
Shielded Gate Trench MOSFET Devices
0 cites