Patents/Assignees

Soitec

127 patents in portfolio

US11855120utility2023
Substrate for a Front-side-type Image Sensor and Method for Producing Such a Substrate
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US11837463utility2023
Method for Manufacturing a Substrate
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US11828000utility2023
Method for Producing a Monocrystalline Layer of Lithium Niobate by Transferring a Seed Layer of Yttria-stabilized Zirconia to a Silicon Carrier Substrate and Epitaxially Growing the Monocrystalline Layer of Lithium Niobate and Substrate for Epitaxial Growth of a Monocrystalline Layer of Lithium Niobate
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US11800803utility2023
Hybrid Structure for a Surface Acoustic Wave Device
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US11776843utility2023
Method for Transferring Blocks from a Donor Substrate Onto a Receiver Substrate by Implanting Ions in the Donor Substrate Through a Mask, Bonding the Donor Substrate to the Receiver Substrate, and Detaching the Donor Substrate Along an Embrittlement Plane
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US11742233utility2023
Method of Mechanical Separation for a Double Layer Transfer
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US11742817utility2023
Process for Transferring a Thin Layer to a Support Substrate That Have Different Thermal Expansion Coefficients
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US11744153utility2023
Method for Producing a Layer by Thinning and Ion Penetration
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US11744154utility2023
Use of an Electric Field for Detaching a Piezoelectric Layer from a Donor Substrate
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US11735685utility2023
Supports for a Semiconductor Structure and Associated Wafers for an Optoelectronic Device
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US11728207utility2023
Method for Fabricating a Strained Semiconductor-on-insulator Substrate
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US11711065utility2023
Substrate for a Temperature-compensated Surface Acoustic Wave Device or Volume Acoustic Wave Device
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US11706989utility2023
Methods for Designing and Producing a Device Comprising an Array of Micromachined Elements, and Device Produced by Said Methods
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US11688627utility2023
Substrate for Radiofrequency Applications and Associated Manufacturing Method
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US11652464utility2023
Surface Acoustic Wave Device and Associated Production Method
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US11637542utility2023
Heterostructure and Method of Fabrication
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US11626319utility2023
Semiconductor-on-insulator Substrate for Rf Applications
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US11600766utility2023
Method for Manufacturing a Monocrystalline Piezoelectric Layer
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US11595020utility2023
Heterostructure and Method of Fabrication
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US11595021utility2023
Saw Resonator Comprising Layers for Attenuating Parasitic Waves
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