Patents/Assignees

Soitec

127 patents in portfolio

US12476134utility2025
Semiconductor Structure for Digital and Radiofrequency Applications, and Method for Manufacturing Such a Structure
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US12476615utility2025
Two-port Acoustic Wave Sensor Device
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US12448284utility2025
Membrane Transfer Method
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US12445102utility2025
Method for Preparing a Thin Layer of Ferroelectric Material
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US12421622utility2025
Method for Producing a Monocrystalline Layer of Lithium Niobate by Transferring a Seed Layer of Yttria-stabilized Zirconia to a Silicon Carrier Substrate and Epitaxially Growing the Monocrystalline Layer of Lithium Niobate and Substrate for Epitaxial Growth of a Monocrystalline Layer of Lithium Niobate
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US12424995utility2025
Method for Manufacturing a Structure Comprising a Thin Layer Transferred Onto a Support Provided with a Charge Trapping Layer
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US12426507utility2025
Method for Producing a Crystalline Layer of PZT Material by Transferring a Seed Layer of SRTIO3 to a Silicon Carrier Substrate and Epitaxially Growing the Crystalline Layer of PZT, and Substrate for Epitaxial Growth of a Crystalline Layer of PZT
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US12417942utility2025
Process for Hydrophilically Bonding Substrates
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US12418120utility2025
Structure for Radio Frequency Applications
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US12392754utility2025
Differential Acoustic Wave Sensors
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US12374546utility2025
Supports for Semiconductor Structures
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US12362173utility2025
Method for Manufacturing a Composite Structure Comprising a Thin Layer of Monocrystalline Sic on an Sic Carrier Substrate
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US12362226utility2025
Method for Forming a Handling Substrate for a Composite Structure Intended for RF Applications and Handling Substrate
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US12356858utility2025
Method for the Production of a Single-crystal Film, in Particular Piezoelectric
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US12344524utility2025
Methods of Fabricating Semiconductor Structures Including Cavities Filled with a Sacrificial Material
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US12334347utility2025
Detachable Structure Used for Transferring or Handling Layers, and Process for Transferring a Layer Using the Detachable Structure
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US12328975utility2025
Optoelectronic Semiconductor Structure Comprising a P-type Injection Layer Based on Ingan
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US12320031utility2025
Method for Manufacturing a Composite Structure Comprising a Thin Layer Made of Monocrystalline Sic on a Carrier Substrate Made of Sic
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US12316298utility2025
Surface Acoustic Wave Device Including Transducer in Dielectric Between a Piezoelectric Material and a Substrate
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US12300737utility2025
Process for Preparing a Thin Layer of Ferroelectric Material
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