Patents/Assignees

Sicrystal GmbH

7 patents in portfolio

US12610792utility2026
Chamfered Silicon Carbide Substrate and Method of Chamfering
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US12460314utility2025
Silicon Carbide Substrate and Method of Growing Sic Single Crystal Boules
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US12195878utility2025
Sic Crystals with an Optimal Orientation of Lattice Planes for Fissure Reduction and Method of Producing Same
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US12157955utility2024
Method for Simultaneously Manufacturing More Than One Single Crystal of a Semiconductor Material by Physical Vapor Transport
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US11781245utility2023
Silicon Carbide Substrate and Method of Growing Sic Single Crystal Boules
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US11624124utility2023
Silicon Carbide Substrate and Method of Growing Sic Single Crystal Boules
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US11560643utility2023
System for Efficient Manufacturing of a Plurality of High-quality Semiconductor Single Crystals by Physical Vapor Transport
0 cites