Semiconductor Manufacturing International (Beijing) Corporation
123 patents in portfolio
- US11810860utility2023Semiconductor Device with Conductive Structure and Insulation Layer of Different Width0 cites
- US11810950utility2023Semiconductor Structure0 cites
- US11799018utility2023Semiconductor Structure and Method for Forming the Same0 cites
- US11784090utility2023Semiconductor Structure0 cites
- US11769672utility2023Semiconductor Structure and Forming Method Thereof0 cites
- US11769688utility2023Method for Manufacturing Semiconductor Memory Having Reduced Interference Between Bit Lines and Word Lines0 cites
- US11769691utility2023Semiconductor Device and Formation Method Thereof0 cites
- US11770922utility2023Semiconductor Device0 cites
- US11764300utility2023Semiconductor Structure and Fabrication Method Thereof0 cites
- US11756795utility2023Semiconductor Structure and Fabrication Method Thereof0 cites
- US11749745utility2023Semiconductor Structure and Fabrication Method Thereof0 cites
- US11742245utility2023Semiconductor Fabrication Method and Structure Using Multiple Sacrificial Layers to Form Sidewall Spacers0 cites
- US11742355utility2023Semiconductor Structure0 cites
- US11742398utility2023Semiconductor Device with Isolation Between Conductive Structures0 cites
- US11742406utility2023Semiconductor Device and Fabrication Method Thereof0 cites
- US11742427utility2023Semiconductor Device0 cites
- US11735429utility2023Method for Forming Semiconductor Structure0 cites
- US11735476utility2023Semiconductor Structure and Fabrication Method Thereof0 cites
- US11728286utility2023Semiconductor Structure0 cites
- US11721553utility2023Formation Method of Semiconductor Device Using Mask Layer and Sidewall Spacer Material Layer to Form Trenches0 cites