Patents/Assignees

II-VI ADVANCED MATERIALS, LLC

12 patents in portfolio

US12618171utility2026
Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
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US12584239utility2026
Physical Vapor Transport System Comprising a Doping Capsule with Inner and Outer Crucibles with a Capillary Channel Formed in an Inner and Outer Crucible Lid
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US12476149utility2025
Crystal Efficient Sic Device Wafer Production
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US12328914utility2025
Buried Grid with Shield in Wide Band Gap Material
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US12060650utility2024
Vanadium-compensated 4H and 6H Single Crystals of Optical Grade, and Silicon Carbide Crystals and Methods for Producing Same
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US12034001utility2024
Concept for Silicon Carbide Power Devices
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US12006591utility2024
Method for Preparing an Aluminum Doped Silicon Carbide Crystal by Providing a Compound Including Aluminum and Oxygen in a Capsule Comprised of a First and Second Material
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US11996330utility2024
Crystal Efficient Sic Device Wafer Production
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US11984474utility2024
Buried Grid with Shield in Wide Band Gap Material
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US11984497utility2024
Integration of a Schottky Diode with a MOSFET
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US11923450utility2024
MOSFET in Sic with Self-aligned Lateral MOS Channel
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US11905618utility2024
Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
0 cites