Patents/Assignees

Icemos Technology Limited

6 patents in portfolio

US12598782utility2026
Super-junction MOSFET/IGBT with MEMS Layer Transfer and WBG Drain
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US12506006utility2025
Semiconductor Device and Method of Direct Wafer Bonding Between Semiconductor Layer Containing Similar WBG Materials
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US12230674utility2025
Radiation Hardened High Voltage Superjunction MOSFET
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US12222316utility2025
Semiconductor Device Providing a Biosensor to Test for Pathogen
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US11757001utility2023
Radiation Hardened High Voltage Superjunction MOSFET
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US11545565utility2023
Semiconductor Device and Method of Forming Low Voltage Power Mosfets Using Graphene for Metal Layers and Graphene Nanoribbons for Channel and Drain Enhancement Regions of Power Vertical and Lateral Mosfets
0 cites