Patents/Assignees

GLOBALWAFERS JAPAN CO., Ltd.

7 patents in portfolio

US12622185utility2026
Method for Manufacturing Semiconductor Silicon Wafer Composed of Silicon Wafer Substrate and Silicon Monocrystalline Epitaxial Layer
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US12488979utility2025
Lamination Wafers and Method of Producing Bonded Wafers Using the Same
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US12378695utility2025
Method for Heat-treating Silicon Wafer
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US12308228utility2025
Manufacturing Method for Semiconductor Silicon Wafer
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US12084785utility2024
Method and Apparatus for Pulling Single Crystal
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US12046469utility2024
Manufacturing Method for Semiconductor Silicon Wafer
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US11754497utility2023
Method for Measuring Extremely Low Oxygen Concentration in Silicon Wafer
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