Patents/Assignees

CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., Ltd.

8 patents in portfolio

US12317531utility2025
Shielded-gate-trench MOSFET and Method for Manufacturing the Same
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US12230672utility2025
Super Junction MOSFET Device
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US12166109utility2024
Trench Field Effect Transistor Structure Comprising Epitaxial Layer and Manufacturing Method Thereof
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US12074197utility2024
Self-balancing Super Junction Structure and Preparation Method Thereof
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US11921776utility2024
Surface Mount Data Conversion Method, System, Medium and Device Based on Component Three-dimensional Database
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US11862676utility2024
Semiconductor Device and Preparation Method Thereof
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US11799024utility2023
Semiconductor Device and Preparation Method Therefor
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US11652170utility2023
Trench Field Effect Transistor Structure Free from Contact Hole
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