Patents/Assignees

CHANGXIN MEMORY TECHNOLOGIES, Inc.

1,639 patents in portfolio

US12469697utility2025
Preparation Method for Capacitor Structure, Capacitor Structure, and Memory
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US12469782utility2025
Equalization Circuit Structure and Manufacturing Method Thereof, Sense Amplification Circuit Structure and Memory Circuit Structure
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US12471267utility2025
Transistor and Manufacturing Method Thereof, and Memory
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US12471271utility2025
Semiconductor Structure and Method for Manufacturing Same, and Memory
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US12471274utility2025
Semiconductor Structure
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US12471275utility2025
Anti-fuse Array and Memory
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US12471325utility2025
Transistor Structure, Semiconductor Structure and Fabrication Method Thereof
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US12464700utility2025
Method of Manufacturing Semiconductor Structure
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US12464708utility2025
Semiconductor Structure and Method for Fabricating Same
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US12464711utility2025
Three-dimensional Memory and Method for Forming Same
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US12464785utility2025
Semiconductor Structure and Method for Fabricating Same
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US12457729utility2025
Method for Forming Capacitor Opening Hole and Method for Forming Memory Capacitor
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US12451180utility2025
Offset Cancellation Method and Method of Preventing Noise Generated During Sensing and Amplification
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US12451885utility2025
Data Transmission Circuit, Data Transmission Method and Electronic Device
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US12453075utility2025
Word Line Structure, Manufacturing Method Thereof and Semiconductor Memory
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US12453158utility2025
Semiconductor Structure and Manufacturing Method Thereof
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US12453169utility2025
Method for Manufacturing Semiconductor Device and Semiconductor Device
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US12453112utility2025
Method of Manufacturing Semiconductor Structure and Semiconductor Structure
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US12453081utility2025
Method of Forming a Bit Line Structure
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US12444727utility2025
Semiconductor Package Structure and Manufacturing Method
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