Patents/Assignees

CHANGXIN MEMORY TECHNOLOGIES, Inc.

1,639 patents in portfolio

US11886287utility2024
Read and Write Methods and Memory Devices
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US11886292utility2024
Memory System
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US11886357utility2024
Memory for Reducing Cost and Power Consumption
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US11889678utility2024
Method of Manufacturing Buried Word Line Structure and Semiconductor Memory Thereof
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US11889677utility2024
Method for Forming Capacitor Holes
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US11889676utility2024
Method for Manufacturing Capacitor, Capacitor Array Structure and Semiconductor Memory
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US11888474utility2024
On Die Termination Circuit and Memory Device
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US11881240utility2024
Systems and Methods for Read/write of Memory Devices and Error Correction
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US11881281utility2024
Dual Reference Voltage Generator, Equalizer Circuit, and Memory
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US11881254utility2024
Enable Control Circuit and Semiconductor Memory
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US11881278utility2024
Redundant Circuit Assigning Method and Device, Apparatus and Medium
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US11880597utility2024
Read Operation Circuit, Semiconductor Memory, and Read Operation Method
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US11880585utility2024
Semiconductor Memory and Method for Writing Data
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US11882693utility2024
Method for Manufacturing Semiconductor Device
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US11882689utility2024
Memory and Manufacturing Method Thereof
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US11882686utility2024
Capacitor and Forming Method Thereof, and DRAM and Forming Method Thereof
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US11882682utility2024
Method for Manufacturing Semiconductor Structure, and Semiconductor Structure
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US11881858utility2024
Clock Generation Circuit, Memory and Method for Calibrating Clock Duty Cycle
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US11881428utility2024
Semiconductor Structure and Manufacturing Method Thereof
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US11877441utility2024
Memory and Fabricating Method Thereof
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