Patents/Assignees

CHANGXIN MEMORY TECHNOLOGIES, Inc.

1,639 patents in portfolio

US12062909utility2024
Method and Apparatus for Capacitor Demand Evaluation in Power Distribution Network
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US12055912utility2024
Wafer Repair Method, Apparatus and Device, and Storage Medium
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US12057318utility2024
Method for Forming Film Layer
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US12051618utility2024
Methods for Forming Semiconductor Structures and Semiconductor Structures
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US12051608utility2024
Method for Adjusting Wafer Deformation and Semiconductor Structure
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US12051699utility2024
Semiconductor Structure and Method for Forming Same
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US12051615utility2024
Method for Manufacturing Semiconductor Structure and Semiconductor Structure
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US12051572utility2024
Semiconductor Manufacturing Apparatus and Method for Cleaning Off Deposit in Chamber of Same
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US12051597utility2024
Material Supply System and Material Supply Method
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US12048139utility2024
Manufacturing Method of Semiconductor Structure Using First Mask Layer and First Photoresist Layer to Selectively Etch Stack on Complete Die Region
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US12047080utility2024
Input Sampling Method and Circuit, Memory and Electronic Device
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US12047069utility2024
Parallel-to-serial Conversion Circuit, Parallel-to-serial Conversion Circuit Layout, and Memory
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US12046630utility2024
Manufacturing Method of Semiconductor Structure and Semiconductor Structure
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US12046552utility2024
Anti-fuse Unit and Anti-fuse Array
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US12046478utility2024
Semiconductor Structure and Method for Manufacturing Semiconductor Structure
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US12046472utility2024
Method for Manufacturing Semiconductor Structure
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US12046321utility2024
Compilation Method, Compilation Circuit, Mode Register and Memory
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US12046320utility2024
Circuit for Controlling Calibration, Electronic Device, and Method for Controlling Calibration
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US12046313utility2024
OTP Device with Read Module and Biasing Circuitry to Detect and Measure Accurate Breakdown States of Anti-fuse Memory Cells
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US12046308utility2024
OTP Memory and Method for Manufacturing Thereof, and OTP Circuit
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