Patents/Assignees

CHANGXIN MEMORY TECHNOLOGIES, Inc.

1,639 patents in portfolio

US12364167utility2025
Semiconductor Structure Including Two Shielding Layers and Manufacturing Method Thereof
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US12363951utility2025
Semiconductor Structure and Method for Fabricating Semiconductor Structure
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US12363884utility2025
Three-dimensional Memory Device with Capacitors and Vertical Word-line
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US12362001utility2025
Voltage Generating Circuit and Memory
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US12362025utility2025
Anti-fuse Address Decoding Circuit, Operation Method, and Memory
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US12356607utility2025
Semiconductor Structure and Manufacturing Method Thereof
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US12353124utility2025
Lithography Method, Lithography Apparatus, and Computer Storage Medium
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US12356666utility2025
Semiconductor Structure and Fabrication Method Thereof
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US12356637utility2025
Method for Forming Semiconductor Structure and Semiconductor Structure
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US12356609utility2025
Buried Bit Line Structure, Method for Fabricating Buried Bit Line Structure, and Memory
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US12356608utility2025
Semiconductor Structure and Manufacturing Method Thereof
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US12356605utility2025
Memory Device and Manufacturing Method Therefor
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US12356603utility2025
Semiconductor Structure and Manufacturing Method for Same
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US12356602utility2025
Memory and Method for Preparing Memory
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US12354971utility2025
Semiconductor Structure, Method for Manufacturing Same and Memory
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US12354941utility2025
Chip Package Structure and Storage System
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US12354703utility2025
Memory Device and ZQ Calibration Method
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US12354706utility2025
Control Apparatus, Memory, Signal Processing Method, and Electronic Device
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US12356655utility2025
Method for Forming Semiconductor Structure, and Semiconductor Structure
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US12347765utility2025
Semiconductor Structure and Method for Fabricating Same
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