Patents/Assignees

CHANGXIN MEMORY TECHNOLOGIES, Inc.

1,639 patents in portfolio

US12387779utility2025
Word-line Drive Circuit, Word-line Driver and Storage Device
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US12387770utility2025
Signal Sampling Circuit and Semiconductor Memory
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US12380940utility2025
Semiconductor Device
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US12382696utility2025
Semiconductor Structure and Method for Manufacturing Same
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US12382643utility2025
Method of Forming Semiconductor Structure and Semiconductor Structure
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US12382627utility2025
Semiconductor Structure and Forming Method Thereof
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US12382624utility2025
2T0C Semiconductor Structure
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US12381115utility2025
Method for Fabricating Semiconductor Structure, and Semiconductor Structure
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US12380961utility2025
Control Method, Semiconductor Memory, and Electronic Device
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US12380941utility2025
Power Supply Switching Circuit and Memory
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US12380939utility2025
Method and Device for Obtaining Row Hammer Refresh Address, and Storage Medium
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US12374634utility2025
Chip Structure and Semiconductor Structure Comprising Auxiliary Bonding Region Above Guard Ring Structure
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US12374585utility2025
Method for Fabricating Semiconductor Structure, and Semiconductor Structure
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US12374550utility2025
Photomask Assembly, Patterned Mask and Method for Forming the Same, and Method for Forming Active Region
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US12374389utility2025
Memory Bank and Memory
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US12374384utility2025
Signal Sampling Circuit and Semiconductor Memory
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US12374382utility2025
Signal Sampling Circuit and Semiconductor Memory
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US12374378utility2025
Monitoring Circuit, Refresh Method and Memory
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US12376325utility2025
Semiconductor Structure with a Transition Layer Located Between Gate and Ion Implantation Layer and Method for Manufacturing Same
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US12376291utility2025
Semiconductor Device Including Shared Sense Amplification Circuit Group
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