Patents/Assignees

CHANGXIN MEMORY TECHNOLOGIES, Inc.

1,639 patents in portfolio

US12406858utility2025
Semiconductor Structure and Method for Manufacturing Semiconductor Structure
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US12406857utility2025
Method for Fabricating Array Structure of Columnar Capacitor and Semiconductor Structure
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US12406856utility2025
Method of Manufacturing Semiconductor Structure and Semiconductor Structure
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US12406840utility2025
Semiconductor Structure and Forming Method Thereof
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US12406706utility2025
Timing Sequence Control Circuit, Timing Sequence Control Method, and Semiconductor Memory
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US12406703utility2025
Structure for Data Transmission, Method for Data Transmission, and Memory
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US12402303utility2025
Semiconductor Structure Having a Plurality of Bit Lines Spaced Apart from Each Other in a First Direction and Extend in a Second Direction
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US12402294utility2025
Semiconductor Structure and Fabrication Method Thereof
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US12402304utility2025
Semiconductor Structure and Manufacturing Method Thereof
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US12402300utility2025
Semiconductor Device Having Channel Regions Distributed on Two Opposite Sides of a Gate Electrode
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US12402299utility2025
Semiconductor Memory Device with Nanowire Structure and Forming Method Thereof
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US12402295utility2025
Method for Fabricating Semiconductor Device and Semiconductor Device
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US12400954utility2025
Semiconductor Structure and Method of Making the Same
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US12400953utility2025
Electro Static Discharge Circuit and Memory
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US12400935utility2025
Semiconductor Structure and Manufacturing Method Thereof
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US12400704utility2025
Input Sampling System and Method, Storage Medium, and Computer Device
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US12396243utility2025
Semiconductor Structure and Method for Preparing Semiconductor Structure
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US12396160utility2025
Method for Fabricating Semiconductor Structure and Semiconductor Structure
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US12396161utility2025
Semiconductor Structure Including Bit Line Compose of a Metal Layer and a Metal Silicide Layer and Manufacturing Method Thereof
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US12394739utility2025
Semiconductor Package and Method of Manufacturing Semiconductor Package
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