Patents/Assignees

BESANG, Inc.

7 patents in portfolio

US12218211utility2025
Structures of Gate Contact Formation for Vertical Transistors
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US12191363utility2025
Methods of Gate Contact Formation for Vertical Transistors
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US12010853utility2024
Methods for Novel Three-dimensional Nonvolatile Memory
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US11978777utility2024
Methods of Gate Contact Formation for Vertical Transistors
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US11925026utility2024
Structures for Novel Three-dimensional Nonvolatile Memory
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US11769809utility2023
Structures of Gate Contact Formation for Vertical Transistors
0 cites
US11600309utility2023
3D Memory with 3D Sense Amplifier
0 cites